advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 150v lower gate charge r ds(on) 100m fast switching characteristic i d 20.5a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w p d @t a =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 3.6 /w rthj-a 65 /w data and specifications subject to change without notice thermal data parameter storage temperature range total power dissipation 34.7 -55 to 150 operating junction temperature range -55 to 150 total power dissipation 1.92 continuous drain current, v gs @ 10v 3 13 pulsed drain current 1 80 gate-source voltage + 20 continuous drain current, v gs @ 10v 3 20.5 parameter rating drain-source voltage 150 ap20n15agi-hf halogen-free product 201303121 1 maixmum thermal resistance, junction-ambient g d s a p20n15a series are from advanced power innovated design and silicon process technology to achieve the lowest possible on- resistance and fast switching performance. it provides the designe r with an extreme efficient device for use in a wide range of powe r applications. the to-220cfm package is widely preferred for all commercial- industrial through hole applications. the mold compound provides a high isolation voltage capability and low thermal resistance between the tab and the external heat-sink g d s to-220cfm(i)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 150 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =10a - - 100 m v gs =4.5v, i d =6a - - 110 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =10a - 28 - s i dss drain-source leakage current v ds =120v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =14a - 17.5 28 nc q gs gate-source charge v ds =120v - 5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 9 - nc t d(on) turn-on delay time v ds =75v - 8 - ns t r rise time i d =14a - 20 - ns t d(off) turn-off delay time r g =10 -70- ns t f fall time v gs =10v - 55 - ns c iss input capacitance v gs =0v - 1600 2560 pf c oss output capacitance v ds =25v - 240 - pf c rss reverse transfer capacitance f=1.0mhz - 5 - pf r g gate resistance f=1.0mhz - 1.2 2.4 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =10a, v gs =0v - - 1.3 v t rr reverse recovery time i s =14a, v gs =0 v , - 135 - ns q rr reverse recovery charge di/dt=100a/s - 740 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.ensure that the channel temperature does not exceed 150 o c this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. ap20n15agi-hf 2
a p20n15agi-h f fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 10 20 30 40 50 0481216 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 10 20 30 40 048121620 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 2.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =10a v g =10v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 64 68 72 76 80 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =10a t c =25 o c 0.0 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) i d =250ua
ap20n15agi-h f fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 0 10203040 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =14a v ds =120v q v g 4.5v q gs q gd q g charge 0 400 800 1200 1600 2000 2400 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90%
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